Standard Production Spec

Today's semiconductor devices are demanding more miniaturization, higher performance, and multifunctionalization. In order to go beyond Moore's law and achieve More than Moore technologies, it is essential to increase the density of semiconductor integrated circuits. For this purpose, interposers with electrode wires inserted directly into the board instead of lead frame wire bonding will become mainstream in the future.

Currently, there are through-electrode substrates such as Though Silicon Vias (TSV) in which through-electrodes are applied to metallized Si wafers, and glass substrates in which current is made possible by metal plating on existing through-hole glass substrates. However, all of them have many limitations in shape processing: their surface smoothness is poor, and there is a disadvantage that electricity is easily leaked to the metal Si wafer or metal plating from the aspect of current conduction of the semiconductor device. Ideally electrodes would be placed directly in the glass, but because glass is hard and fragile, it’s difficult to process or cost prohibitive. However, interposer wafers processed with our innovative glass mold processing technique can solve many problems. Through glass via wiring can be arranged precisely. In addition, Through glass via electrode wiring can be routed not only in the glass plane but also inside concave shapes.

Glass substrates have high smoothness and shape stability and contribute to the prevention of yield degradation due to defects in sealing or processing defects during dicing and cutting. Interposer wafer processing, which tends to cause low yield or high cost while dicing, can be produced in large quantities at low cost with our glass molding technology. We believe that our interposer wafer will contribute to the manufacture of more advanced semiconductor devices.